WPM2026 single p-channel, -20v, -3.2a, po wer mosfet descriptions the WPM2026 is p-cha nnel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2026 is pb-free. features t r ench technology supper high density cell design excellent on resistance for higher dc current extremely low threshold voltage small package sot-23 applications drive r for relay, solenoid, motor, led etc. dc-dc converter circuit power switch load switch charging sot-23 pin configuration (top view) w26* w 2 6 = device code * = month (a~z) marking order information devi ce package shipping WPM2026-3/tr sot- 23 3000/reel&tape v ds (v) rds(on) () 0.056@ v gs = " 4.5v 0.069@ v gs = " 2.5v -20 0.086@ v gs = " 1.8v d 3 gs 1 2 3 2 1 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs v t a =25c -3.2 -2.9 continuous drain current a t a =70c i d -2.6 -2.3 a t a =25c 0.9 0.8 maximum power dissipation a t a =70c p d 0.6 0.5 w t a =25c -2.9 -2.7 continuous drain current b t a =70c i d -2.3 -2.1 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.5 0.4 w pulsed drain current c i dm -12 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 s 105 130 junction-to-ambient thermal resistance a steady state r ja 120 155 t 10 s 130 160 junction-to-ambient thermal resistance b steady state r ja 145 190 junction-to-case thermal resistance steady state r jc 40 60 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WPM2026 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds =-16 v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.3 5 -0.6 -1.0 v v gs = -4.5v, i d = -3.2a 56 65 v gs = -2.5v, i d = -2.8a 69 81 drain-to-source on-resistance r ds(on) v gs = -1.8v, i d = -2.3a 86 110 m forward transconductance g fs v ds = -5 v, i d = -3.6a 10 s charges, capacitances and gate resistance input capacitance c iss 1130 output capacitance c oss 120 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -10 v 115 pf total gate charge q g(tot) 11 threshold gate charge q g(th) 0.6 gate-to-source charge q gs 1.3 gate-to-drain charge q gd v gs = -4.5 v, v ds = -10 v, i d = -2.7a 2.7 nc switching characteristics turn-on delay time td(on) 16 rise time tr 20 turn-off delay time td(off) 65 fall time tf v gs = -4.5 v, v dd = -10 v, r l =3.5 , r g =6 15 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -1.0a -0.62 -1.5 v WPM2026 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
|
